Vishay SI2309CDS-T1-GE3 MOSFET Tape on Full reel N-channel 20V 2.8A
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Vishay Semiconductors-Discrete Semiconductors-MOSFETs 653224 - Vishay SI2309CDS-T1-GE3, Vishay's SI2309CDS-T1-GE3 is an N-channel MOSFET designed for efficient, compact switching and amplifying applications. This metal-oxide-semiconductor field-effect transistor (MOSFET) operates with a maximum drain-source voltage of 20V and a continuous drain current of 2.8A, making it suitable for low-voltage applications. The device features a unipolar structure that allows for fast switching speeds and reduced power loss, crucial for circuits requiring reliable performance under varying loads. Typical applications include power management in portable electronics, DC-DC converters, and motor control circuits, where efficient switching is paramount. Its compact design in a tape on full reel form factor allows for ease of integration in automated assembly processes, enhancing its utility in high-volume manufacturing environments. Vishay SI2309CDS-T1-GE3 MOSFET Tape on Full reel N-channel 20V 2.8A