Vishay SI2319CDS-T1-GE3 MOSFET Tape on reel N-Channel 20V 3.5A SMT...

Vishay

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Vishay Semiconductors-Discrete Semiconductors-MOSFETs 653224 - Vishay SI2319CDS-T1-GE3, Vishay SI2319CDS-T1-GE3 is a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for surface-mount technology (SMT) applications. This N-channel MOSFET operates at a maximum drain-source voltage of 20V and can handle currents up to 3.5A, making it suitable for low to moderate power applications. The device features an enhancement mode operation, which ensures that the channel conducts when a positive voltage is applied to the gate relative to the source. Its compact design, facilitated by the SMT package, allows for efficient usage in circuits where space is a constraint, such as in portable devices or power management systems. Common applications include serving as a switching device in power supplies and managing load control in battery-operated equipment. Vishay SI2319CDS-T1-GE3 MOSFET Tape on reel N-Channel 20V 3.5A SMT package